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| SI2306DS Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES ID (A) 3.5 2.8 rDS(on) (W) 0.057 @ VGS = 10 V 0.094 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 100% Rg Tested - TO-236 (SOT-23) G 1 3 D S 2 Top View SI2306DS (A6)* *Marking Code Ordering Information: SI2306DS-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 30 "20 3.5 2.8 16 1.25 1.25 0.80 - 55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambienta Junction-to-Ambient Notes a. Surface Mounted on FR4 Board. b. t v 5 sec. Document Number: 70827 S-31873--Rev. C, 15-Sep-03 www.vishay.com t v 5 sec Steady State Symbol RthJA Typical 130 Maximum 100 Unit _C/W 1 SI2306DS Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS ID( ) D(on) VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS w 4.5 V, VGS = 10 V VDS w 4.5 V, VGS = 4.5 V VGS = 10 V, ID = 3.5 A VGS = 4.5 V, ID = 2.8 A VDS = 4.5 V, ID = 3.5 A IS = 1.25 A, VGS = 0 V 6 4 0.046 0.070 6.9 0.8 1.2 0.057 0.094 W S V 30 1 "100 0.5 10 V nA mA Symbol Test Condition Min Typ Max Unit On-State On State Drain Currenta A Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea rDS(on) gfs VSD Dynamicb Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgt Qgs Qgd Rg Ciss Coss Crss VDS = 15 V, VGS = 0 V, f= 1 MHz , , 0.5 555 120 60 p pF VDS = 15 V, VGS = 10 V, ID = 3.5 A , , VDS = 15 V, VGS = 5 V, ID = 3.5 A 4.2 8.5 1.9 1.35 2.4 W 7 20 nC Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tf VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W 9 7.5 17 5.2 20 18 35 12 ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com 2 Document Number: 70827 S-31873--Rev. C, 15-Sep-03 SI2306DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 16 Output Characteristics 16 Transfer Characteristics 12 I D - Drain Current (A) VGS = 10 thru 5 V I D - Drain Current (A) 12 8 4V 8 TC = 125_C 4 25_C 0 - 55_C 3 4 5 4 3 thru 1 V 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) 0 1 2 VGS - Gate-to-Source Voltage (V) 0.5 On-Resistance vs. Drain Current 800 700 Capacitance r DS(on) - On-Resistance ( W ) 0.4 C - Capacitance (pF) 600 500 400 300 200 Coss Ciss 0.3 0.2 VGS = 4.5 V VGS = 10 V 0.1 100 0 Crss 0 6 12 18 24 30 0.0 0 4 8 ID - Drain Current (A) 12 16 VDS - Drain-to-Source Voltage (V) 10 V GS - Gate-to-Source Voltage (V) VDS = 15V ID = 3.5 A Gate Charge 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 3.5 A 6 r DS(on) - On-Resistance (W) (Normalized) 4 6 8 10 8 1.4 1.2 4 1.0 2 0.8 0 0 2 Qg - Total Gate Charge (nC) 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Document Number: 70827 S-31873--Rev. C, 15-Sep-03 www.vishay.com 3 SI2306DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 10 0.5 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) 0.4 I S - Source Current (A) TJ = 150_C 0.3 0.2 ID = 3.5 A 0.1 TJ = 25_C 1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 0.0 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 0.2 V GS(th) Variance (V) - 0.0 Power (W) - 0.2 - 0.4 - 0.6 - 0.8 - 50 ID = 250 mA 12 10 Single Pulse Power 8 6 4 2 TA = 25_C - 25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (sec) 10 100 500 TJ - Temperature (_C) 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Normalized Thermal Transient Impedance, Junction-to-Ambient Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 130_C/W 3. TJM - TA = PDMZthJA(t) t1 t2 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 4. Surface Mounted 10 100 500 Square Wave Pulse Duration (sec) www.vishay.com Document Number: 70827 S-31873--Rev. C, 15-Sep-03 4 |
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